半導体の結晶科学とデバイス創製センター

卓越型リサーチセンター

半導体の結晶科学とデバイス創製センター

Research Center for Materials Science and Advanced Electronics Created by Singularity

活動実績

研究成果

研究業績リスト（代表3名について）　過去5年分(2017-2021)

  1. (1) T. Omori, A. Yabutani, S. Tanaka, K. Yamada, M. Shimokawa, R. Hasegawa, S. Iwayama, H. Miyake, T. Takeuchi1, S. Kamiyama1, and M. Iwaya1, "Reduction of dislocation density in lattice-relaxed
    Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes", Applied Physics Express, 15, 3, 031004, (2022.3.3), 10.35848/1882-0786/ac5724
  2. (2) M. Shimokawa1, Y. Yamada, T. Omori, K. Yamada, R. Hasegawa, T. Nishibayashi, A. Yabutani, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, H. Miyake, K. Miyoshi, K. Naniwae, and A. Yamaguchi, "Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (～43 kA cm-2) using a laser liftoff method", Applied Physics Express, 15, 4, 041006, (2022.3.28), 10.35848/1882-0786/ac5e64
  3. (3) R. Moriya, J. Kikawa, S. Mouri, T. Shinohe, S. Xiao, H. Miyake, and T. Araki "Cathodoluminescence study of m-plane α-Ga2O3 grown by mist chemical vapor deposition", Phys, Status Solidi B, 259, 4, 2100598 (2022.1.18), 10.1002/pssb.202100598
  4. (4) Shin Yoshida, Kanako Shojiki, H. Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama "Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows", Japanese Journal of Applied Physics, 61, 030904 (2022.3.8).10.35848/1347-4065/ac55e5
  5. (5) M. Iwaya, S. Tanaka, T. Omori, K. Yamada, R. Hasegawa, M. Shimokawa, A. Yabutani, S. Iwayama, K. Sato, T. Takeuchi, S. Kamiyama, H. Miyake "Recent development of UV-B laser diodes", Japanese Journal of Applied Physics, 61, 4, 040501, (2022.3.16), 10.35848/1347-4065/ac3be8
  6. (6) H. Murotani, A. Fujii, R. Oshimura, T. Kusaba, K. Uesugi, H. Miyake, and Y. Yamaguchi, "Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates", Applied Physics Express, 14, 12, 122004 (2021.11.22). 10.35848/1882-0786/ac3802
  7. (7) K. Uesugi, H. Miyake, "Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs", Japanese Journal of Applied Physics, 60, 12, 120502 (2021.12.2). 10.35848/1347-4065/ac3026
  8. (8) Y. Hayashi, K. Uesugi, K. Shojiki, T. Tohei, A. Sakai, and H. Miyake, "Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing", AIP Advances, 11, 9, 095012 (2021.9.13). 10.1063/5.0059723
  9. (9) Y. Iba, K. Shojiki, S. Kuboya, K. Uesugi, S. Xiao, H. Miyake, "Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns" Journal of Crystal Growth, 570, 126237, (2021.9.15), 10.1016/j.jcrysgro.2021.126237
  10. (10) K. Shojiki, K. Uesugi, S. Kuboya, H. Miyake, "Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire", Journal of Crystal Growth, 574, 126309, (2021.9.15), 10.1016/j.jcrysgro.2021.126309
  11. (11) S. Tanaka, Y. Ogino, K. Yamada, R. Ogura, S. Teramura, M. Shimokawa, S. Ishizuka, S. Iwayama, K. Sato, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, "Low-threshold-current (~ 85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure", Applied Physics Express, 14, 9, 094009, (2021.9.3), 10.35848/1882-0786/ac200b
  12. (12) K. Uesugi, K. Shojiki, S. Xiao, S. Kuboya, H. Miyake, "Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films", MDPI Coatings, 11, 8, 956, (2021.8.10), 10.3390/coatings11080956
  13. (13) Y. Sakurai, K. Ueno, A. Kobayashi, K. Uesugi, H. Miyake, H. Fujioka, "High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing", physica status solidi (a), 218, 16, 2100074, (2021.8.17), 10.1002/pssa.202100074
  14. (14) S. Xiao, K. Shojiki, H. Miyake, "Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy", Journal of Crystal Growth, 566, 126163, (2021.7.15), 10.1016/j.jcrysgro.2021.126163
  15. (15) K. Sato, T. Omori, K. Yamada, S. Tanaka, S. Ishizuka, S. Teramura, S. Iwayama, M. Iwaya, H. Miyake, T. Takeuchi, S. Kamiyama, I. Akasaki, "Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length", Japanese Journal of Applied Physics, 60, 7, 074002, (2021.6.14), 10.35848/1347-4065/ac0643
  16. (16) S. Tanaka, S. Teramura, M. Shimokawa, K. Yamada, T. Omori, S. Iwayama, K. Sato, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate", Applied Physics Express, 14, 5, 055505, (2021.4.27), 10.35848/1882-0786/abf763
  17. (17) S, Tanaka, Y, Ogino, K, Yamada, T, Omori, R, Ogura, S, Teramura, M, Shimokawa,
    S, Ishizuka, A, Yabutani, S, Iwayama, K, Sato, H, Miyake, M, Iwaya, T, Takeuchi, S, Kamiyama, I, Akasaki, "AlGaN-based UV-B laser diode with a high optical confinement factor", Applied Physics Letters, 118, 16, 163504, (2021.4.21), 10.1063/5.0046224
  18. (18) D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Applied Physics Express, 14, 3, 035505-1－035505-5, (2021.2), 10.35848/1882-0786/abe522
  19. (19) D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Applied Physics Express, 14, 3, 035505-1－035505-5, (2021.2), 10.35848/1882-0786/abe522
  20. (20) I Abid, R Kabouche, F Medjdoub, S Besendorfer, E Meissner, J Derluyn, S Degroote, M Germain, H Miyake, "Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure", 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 310-312, (2020.9), 10.1109/ISPSD46842.2020.9170170
  21. (21) S. Kuboya, K. Uesugi, K. Shojiki, Y. Tezen, K. Norimatsu, H. Miyake, "Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer", Journal of Crystal Growth, 545, 125722, (2020.9), 10.1016/j.jcrysgro.2020.125722
  22. (22) A. Uedono, K. Shojiki, K. Uesugi, S. F Chichibu, S. Ishibashi, M. Dickmann, W. Egger, C. Hugenschmidt, H. Miyake, "Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams", Journal of Applied Physics, 128, 8, 085704, (2020.8), 10.1063/5.0015225
  23. (23) D. Wang, K. Uesugi, S. Xiao, K. Norimatsu, H. Miyake, "Low dislocation density AlN on sapphire prepared by double sputtering and annealing", Applied Physics Express, 13, 9, 095501, (2020.8), 10.35848/1882-0786/ababec
  24. (24) S. Teramura, Y. Kawase, Y. Sakuragi, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing", physica status solidi (a), 217, 14, 1900868, (2020.7), 10.1002/pssa.201900868
  25. (25) S. Miasojedovas, P. Ščajev, K. Jarašiūnas, B. Gil, H. Miyake, "Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K", Physical Review B, 102,3, 035201, (2020.7), 10.1103/PhysRevB.102.035201
  26. (26) T. Omori, S. Ishizuka, S. Tanaka, S. Yasue, K. Sato, Y. Ogino, S. Teramura, K. Yamada, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "Internal loss of AlGaN-based ultraviolet-B band lasr diodes with p-type AlGaN cladding layer using polarization doping", Applied Physics Express, 13,7, 071008, (2020.6), 10.35848/1882-0786/ab9e4a
  27. (27) D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani, "Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation", Applied Physics Express, 13, 6, 061003, (2020.5), 10.35848/1882-0786/ab8c1c
  28. (28) Bowen Sheng, Gordon Schmidt, Frank Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, Jurgen Blasing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, Andre Strittmatter, Bo Shen, Jurgen Christen, Xinqiang Wang, "Individually resolved luminescence from closely stacked GaN/AlN quantum wells", Photonics Research, 8,4, 610-615, (2020.4), 10.1364/PRJ.384508
  29. (29) S. Tanaka, Y. Kawase, S. Teramura, S. Iwayama, K. Sato, S. Yasue, T. Omori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers", Applied Physics Express, 13, 4, 045504, (2020.3), 10.35848/1882-0786/ab7caf
  30. (30) K. Sato, S. Yasue, K. Yamada, S. Tanaka, T. Omori, S. Ishizuka, S. Teramura, Y. Ogino, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire", Applied Physics Express, 13, 3, 031004, (2020.2), 10.35848/1882-0786/ab7711
  31. (31) Y. Iba, K. Shojiki, K. Uesugi, S. Xiao, H. Miyake, "MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN", Journal of Crystal Growth, 532, 125397, (2020.2), 10.1016/j.jcrysgro.2019.125397
  32. (32) K. Uesugi, K. Shojiki, Y. Tezen, Y. Hayashi, H. Miyake, "Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template", Applied Physics Letters, 116, 6, 062101, (2020.2), 10.1063/1.5141825
  33. (33) S. Teramura, Y. Kawase, Y. Sakuragi, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing", physica status solidi (a), 1900868, (2020.2), 10.1002/pssa.201900868
  34. (34) T. Shirato, Y. Hayashi, K. Uesugi, K. Shojiki, H. Miyake, "High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate", physica status solidi (b), 257, 2, 1900447, (2020.2), 10.1002/pssb.201900447
  35. (35) H. Fujikura, T. Konno, T. Kimura, H. Miyake, "AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates", Applied Physics Express, 13, 2, 025506, (2020.1), 10.7567/1882-0786/ab65a0
  36. (36) K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake, "Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells", AIP Advances, 9, 12, 125342, (2019), 10.1063/1.5125799
  37. (37) SH. Lee, H. Jeong, OF. NgomeOkello, S. Xiao, S. Moon, D. Kim, GY. Kim, JL. Lo, YC. Peng, BM. Cheng, H. Miyake, SY. Choi, JK. Kim, "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing", Scientific reports, 9, 1, 1-8, (2019), 10.1038/s41598-019-47093-9
  38. (38) Y. Ishitani, K. Oki, H. Miyake, "Statistics of excitonic energy states based on phononic-excitonic-radiative model", Japanese Journal of Applied Physics, 58, SC, SCCB34, (2019), 10.7567/1347-4065/ab09e2
  39. (39) Y. Kawase, S. Ikeda, Y. Sakuragi, S. Yasue, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "Ultraviolet-B band lasers fabricated on highly relaxed thick Al0. 55Ga0. 45N films grown on various types of AlN wafers", Japanese Journal of Applied Physics, 58, SC, SC1052, (2019), 10.7567/1347-4065/ab0d04
  40. (40) T. Akiyama, M. Uchino, K. Nakamura, T. Ito, S. Xiao, H. Miyake, "Structural analysis o K. Uesugi, Y. Hayashi, K. Shojiki, H. Miyake, "Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures", Applied Physics Express, 12, 6, 065501, (2019), 10.7567/1882-0786/ab1ab8 K. Nagamatsu, X. Liu, K. Uesugi, H. Miyake, "Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN", Japanese Journal of Applied Physics, 58, SC, SCCC07, (2019), 10.7567/1347-4065/ab07a1f polarity inversion boundary in sputtered AlN films annealed under high temperatures", Japanese Journal of Applied Physics, 58, SC, SCCB30, (2019), 10.7567/1347-4065/ab0d01
  41. (41) K. Shojiki, Y. Hayashi, K. Uesugi, H. Miyake, "Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy" Japanese Journal of Applied Physics, 58, SC, SCCB17, (2019), 10.7567/1347-4065/ab0d07
  42. (42) Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen, H. Wang, T. Wang, P. Wang, P. Jin, Y. Chen, V. Kozlovsky, D. Sviridov, M. Zverev, E. Zhdanova, N. Gamov, V. Studenov, H. Miyake, H. Li, S. Guo, X. Yang, F. Xu, T. Yu, Z. Qin, W. Ge, B. Shen, X. Wang, "Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt", Advanced Optical Materials, 7, 10, 1801763, (2019), 10.1002/adom.201801763
  43. (43) S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake, "Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy", Japanese Journal of Applied Physics, 58, SC, SC1003, (2019), 10.7567/1347-4065/ab0ad4
  44. (44) Y. Hayashi, K. Tanigawa, K. Uesugi, K. Shojiki, H. Miyake, "Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing", Journal of Crystal Growth, 512, 131-135, (2019), 10.1016/j.jcrysgro.2019.02.026
  45. (45) S. Tanaka, K. Shojiki, K. Uesugi, Y. Hayashi, H. Miyake, "Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film", Journal of Crystal Growth, 512, 16-19, (2019), 10.1016/j.jcrysgro.2019.02.001
  46. (46) K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake, "Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing", Journal of Crystal Growth, 510, 13-17, (2019),　10.1016/j.jcrysgro.2019.01.011
  47. (47) Y. Sakurai, K. Ueno, A. Kobayashi, J. Ohta, H. Miyake, H. Fujioka, "Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering", APL Materials, 6(11), 111103,
    (2018), 10.1016/j.jcrysgro.2018.09.002
  48. (48) S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, Y. Yamada, "Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells", Japanese Journal of Applied Physics, 57(6), 60311, (2018), 10.7567/JJAP.57.060311
  49. (49) H. Murotani, Y. Hayakawa, K. Ikeda, H. Miyake, K. Hiramtsu, Y. Yamada, "Temperature dependence of excitonic transitions in Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells from 4 to 750 K", Journal of Applied Physics, 123(20), 205705, (2018), 10.1063/1.5023996
  50. (50) S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara, "Improvement mechanism of sputtered AlN films by high-temperature annealing", Journal of Crystal Growth, 502, 41-44, (2018), 10.1016/j.jcrysgro.2018.09.002
  51. (51) Y. Hayashi, R. Katayama, T. Akiyama, T. Ito, H. Miyake, "Polarity inversion of aluminum nitride by direct wafer bonding", Applied Physics Express, 11(3), 31003, (2018), 10.7567/APEX.11.031003
  52. (52) K. Shida, S. Takeuchi, T. Tohei, H. Miyake, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura, A. Sakai, "Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction", Journal of Applied Physics, 123(16), 161563, (2018), 10.1063/1.5011291
  53. (53) H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, Y. Yamada, "Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0. 61Ga0. 39N Epitaxial Layer", physica status solidi (b), 255(5), 1700374, (2018), 10.1002/pssb.201700374
  54. (54) J. Hakamata, Y. Kawase, L. Dong, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, H. Miyake, I. Akasaki, "Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing", physica status solidi (b), 255(5), 1700506, (2018), 10.1002/pssb.201700506
  55. (55) H. Miyake, Y. Hayashi, S. Xiao, K. Hiramatsu, "High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation)", Gallium Nitride Materials and Devices XIII, 10532, 1053202, (2018), 10.1117/12.2292561
  56. (56) A. Mishima, Y. Tomita, Y. Yano, T. Tabuchi, K. Matsumoto, H. Miyake, "Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere", Gallium Nitride Materials and Devices XIII, 10532, 1053204, (2018), 10.1117/12.2292182
  57. (57) N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl, "AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire", Applied Physics Letters, 112(4), 41110, (2018), 10.1063/1.5010265
  58. (58) DT. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai, "Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction'', Japanese Journal of Applied Physics, 56 (2), 025502 (2017), 10.7567/JJAP.56.025502
  59. (59) H. Murotani, K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, Y. Yamada, "High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells'', Applied Physics Express, 10 (2), 021002 (2017), 10.7567/APEX.10.021002
  60. (60) K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, Y. Yamada, "Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells'', Applied Physics Express, 10 (5), 051003 (2017), 10.7567/APEX.10.051003
  61. (61) CY. Huang, PY. Wu, KS. Chang, YH. Lin, WC. Peng, YY. Chang, JP Li, HW. Yen, YS. Wu, H. Miyake, HC. Kuo, "High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes'', AIP Advances, 7 (5), 055110 (2017), 10.1063/1.4983708
  62. (62) S. Okada, H. Iwai, H. Miyake, K. Hiramatsu, "Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates'', Journal of Crystal Growth, 468, 851-855 (2017), 10.1016/j.jcrysgro.2016.12.011
  63. (63) CH. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu, "Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions'', Journal of Crystal Growth, 468, 845-850 (2017), 10.1016/j.jcrysgro.2016.09.076
  64. (64) A. Motogaito, Y. Iguchi, S. Kato, H. Miyake, K. Hiramatsu, "Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus'', 2017 22nd Microoptics Conference (MOC), 276-277(2017), 10.23919/MOC.2017.8244593
  65. (65) S. Okada, H. Iwai, H. Miyake, K. Hiramatsu, "Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns'', Japanese Journal of Applied Physics, 56 (12), 125504 (2017), 10.7567/JJAP.56.125504
  66. (66) A. Motogaito, T. Nakajima, H. Miyake, K. Hiramatsu, "Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure'', Applied Physics A, 123 (12), 729, (2017), 10.1007/s00339-017-1367-6
  67. (67) R. Yoshizawa, H. Miyake, K. Hiramatsu, "Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy", Japanese Journal of Applied Physics, 57 (1S), 01AD05 (2017), 10.7567/JJAP.57.01AD05

秋山亨（代表的教員）

  1. (1) T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, K. Chokawa, K. Shiraishi, "Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces", Japanese Journal of Applied Physics, 61, SH1002, 2022, 10.35848/1347-4065/ac5a96
  2. (2) F. Hishiki, T. Akiyama, T. Kawamura, T. Ito, "K. Niki, T. Akiyama, T. Ito, "Structures and stability of GaN/Ga2O3 interfaces: a first-principles study", Japanese Journal of Applied Physics, 61, 065501, 2022, 10.35848/1347-4065/ac5e90
  3. (3) K. Niki, T. Akiyama, T. Ito, "An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN", Japanese Journal of Applied Physics, 61, 55503, 2022, 10.35848/1347-4065/ac5dab
  4. (4) S. Ohata, T. Kawamura, T. Akiyama, S. Usami, M. Imanishi, M. Yoshimura, Y. Mori, T. Sumi, J. Takino, "Influence of oxygen-related defects on the electronic structure of GaN", Japanese Journal of Applied Physics, 61, 61004, 2022, 10.35848/1347-4065/ac6645
  5. (5) T. Kawamura, T. Akiyama, "Bandgap engineering of alpha-Ga2O3 by hydrostatic, uniaxial, and equibiaxial strain", Japanese Journal of Applied Physics, 61, 061004, 2022, 10.35848/1347-4065/ac468f
  6. (6) T. Shimizu, T. Akiyama, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction", Physical Review Materials, 5, 114601, 2021, 10.1103/PhysRevMaterials.5.114601
  7. (7) T. Akiyama, A. Nakatani, T. Shimizu, Takumi Ohka, T. Ito, "Effective approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces", Japanese Journal of Applied Physics, 60, 8701, 2021, 10.35848/1347-4065/ac1128
  8. (8) T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation", Japanese Journal of Applied Physics, 60, SBBD10, 2021, 10.35848/1347-4065/abdcb1
  9. (9) T. Akiyama, T. Kawamura, T. Ito, "Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds", Applied Physics Letters, 118, 23101, 2021, 10.1063/5.0032452
  10. (10) T. Kawamura, T. Akiyama, A. Kitamoto, M. Imanishi, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto, "Absolute surface energies of oxygen-adsorbed GaN surfaces", Journal of Crystal Growth, 549, 125868, 2021, 10.1016/j.jcrysgro.2020.125868
  11. (11) T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study", ECS Transactions, 98, 37, 2020, 10.1149/09803.0037ecst
  12. (12) K. Nagai, T. Akiyama, K. Nakamura, T. Ito, "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate", ECS Transactions, 98, 155, 2020, 10.1149/09806.0155ecst
  13. (13) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of Film Thickness on Structural Stability for BAlN and BGaN Alloys: Bond-Order Interatomic Potential Calculations", Physica Status Solidi (B) Basic Research, 257, 2000205, 2020, 10.1002/pssb.202000205
  14. (14) T. Shimizu, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface", Japanese Journal of Applied Physics, 59, SMMD01, 2020, 10.35848/1347-4065/ab85dd
  15. (15) Takumi Ohka, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study", Crystal Growth & Design, 20, 4358, 2020, 10.1021/acs.cgd.0c00117
  16. (16) Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition", Applied Physics Express, 13, 065505, 2020, 10.35848/1882-0786/ab9182
  17. (17) T. Kawamura, Y. Fujita, Y. Hamaji, T. Akiyama, Y. Kangawa, I. Gorczyca, T. Suski, M. Wierzbowska, S. Krukowski, "First-Principles Calculation of Bandgaps of AlInN Alloys and Short-Period AlxIn1-xN/Al1-yInyN Superlattices", Physica Status Solidi (B) Basic Research, 257, 1900530, 2022, 10.1002/pssb.201900530
  18. (18) H. Nakashima, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Electron correlation effects and magneto-optical properties of yttrium iron garnet", AIP Advances, 10, 045029, 2022, 10.1063/1.5130147
  19. (19) T. Akiyama, Takumi Ohka, K. Nakamura, T. Ito, "Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces", Japanese Journal of Applied Physics, 59, SGGK03, 2022, 10.7567/1347-4065/ab6566
  20. (20) Y. Seta, A. -M. Pradipto, T. Akiyama, K. Nakamura, T. Ito, "Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor-Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies", Physica Status Solidi (B) Basic Research, 257, 2000205, 2020, 10.1002/pssb.201900523
  21. (21) T. Akiyama, Takumi Ohka, K. Nakamura, T. Ito, "Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface", Journal of Crystal Growth, 532, 25410, 2020, 10.1016/j.jcrysgro.2019.125410
  22. (22) T. Shimizu, Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, Akira Kusaba, Y. Kangawa, "Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions", Japanese Journal of Applied Physics, 59, 28003, 2020, 10.35848/1347-4065/ab68af
  23. (23) K. Yonemoto, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate", Journal of Crystal Growth, 532, 125369, 2020, 10.1016/j.jcrysgro.2019.125369
  24. (24) M. Arifin, T. Matsumoto, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "First principles calculation of optical properties of transition metals for surface plasmon resonance application", e-Journal of Surface Science and Nanotechnology, 18, 133, 2020, 10.1380/ejssnt.2020.133
  25. (25) T. Akiyama, Y. Hasegawa, K. Nakamura, T. Ito, "Realization of honeycomb structures in octet A N B8-N binary compounds under two-dimensional limit", Applied Physics Express, 12, 125501, 2019, 10.7567/1882-0786/ab524c
  26. (26) K. Yonemoto, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)", Japanese Journal of Applied Physics, 58, SIIB25, 2019, 10.7567/1347-4065/ab19ad
  27. (27) T. Akiyama, K. Nakamura, T. Ito, "Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study", Nanotechnology, 30, 234002, 2019, 10.1088/1361-6528/ab06d0
  28. (28) S. Tsumuki, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate", Japanese Journal of Applied Physics, 58, SC1009, 2019, 10.7567/1347-4065/ab06b1
  29. (29) T. Akiyama, M. Uchino, K. Nakamura, T. Ito, S. Xiao, H. Miyake, "Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures", Japanese Journal of Applied Physics, 58, SCCB30, 2019, 10.7567/1347-4065/ab0d01
  30. (30) T. Akiyama, Y. Tsuboi, K. Nakamura, T. Ito, "An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate", Journal of Crystal Growth, 511, 89, 2019, 10.1016/j.jcrysgro.2019.01.036
  31. (31) S. Ando, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Effect of 4d and 5d Transition-Metal Insertions to Spin-Dependent Transports in Fe/MgO Superlattices", Journal of Electronic Materials, 48, 1380, 2019, 10.1007/s11664-018-6779-3
  32. (32) K. Hayashi, A. -M. Pradipto, K. Nozaki, T. Akiyama, T. Ito, Tamio Oguchi, K. Nakamura, "Machine Learning Approach for Data Analysis of Magnetic Orbital Moments and Magnetocrystalline Anisotropy in Transition-Metal Thin Films on MgO(001)", Journal of Electronic Materials, 48, 1319, 2019, 10.1007/s11664-018-6808-2
  33. (33) Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth", Journal of Crystal Growth, 510, 7, 2019, 10.1016/j.jcrysgro.2018.12.011
  34. (34) T. Akiyama, Y. Seta, K. Nakamura, T. Ito, "Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides", Physical Review Materials, 3, 023401, 2019, 10.1103/PhysRevMaterials.3.023401
  35. (35) T. Ito, T. Akiyama, K. Nakamura, A. -M. Pradipto, "Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)", Physica Status Solidi (A) Applications and Materials Science, 216, 201800476, 2019, 10.1002/pssa.201800476
  36. (36) T. Ito, T. Akiyama, K. Nakamura, "Growth mode in heteroepitaxial system from nano- and macro- theoretical viewpoints", Journal of Crystal Growth, 512, 41, 2019, 10.1016/j.jcrysgro.2019.01.028
  37. (37) Y. Seta, A. -M. Pradipto, T. Akiyama, K. Nakamura, T. Ito, Akira Kusaba, Y. Kangawa, "Thermodynamic analysis of semipolar gan and aln under metalorganic vapor phase epitaxy growth conditions", Japanese Journal of Applied Physics, 58, SC1014, 2019, 10.7567/1347-4065/ab040a
  38. (38) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Theoretical investigations on the structural stability and miscibility in baln and bgan alloys: Bond-order interatomic potential calculations", Japanese Journal of Applied Physics, 58, SCCB21, 2019, 10.7567/1347-4065/ab06af
  39. (39) T. Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Y. Kangawa, Koichi Kakimoto, T. Akiyama, "First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth", Japanese Journal of Applied Physics, 57, 115504, 2019, 10.7567/JJAP.57.115504
  40. (40) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys", Journal of Crystal Growth, 504, 13, 2018, 10.1016/j.jcrysgro.2018.09.016
  41. (41) M. Uchino, T. Akiyama, K. Nakamura, T. Ito, "An ab initio approach to polarity inversion of AlN and GaN films on AIN(000(1)over-bar) substrate with Al overlayers: an insight from interface energies", Japanese Journal of Applied Physics, 57, 115504, 2018, 10.7567/JJAP.57.098001
  42. (42) K. Nakamura, A. M. Pradipto, T. Akiyama, T. Ito, T. Oguchi, M. Weinert, "Symmetric and asymmetric exchange stiffnesses of transition-metal thin film interfaces in external electric field", Journal of Magnetism and Magnetic Materials, 457, 97, 2018, 10.1016/j.jmmm.2018.02.068
  43. (43) Y. Tsuboi, T. Akiyama, K. Nakamura, T. Ito, "Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study", Physica Status Solidi (B) Basic Research, 255, 1700446, 2018, 10.1002/pssb.201700446
  44. (44) T. Akiyama, Harunobu Nakane, Motoshi Uchino, K. Nakamura, T. Ito, "Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies", Physica Status Solidi (B) Basic Research, 255, 1700329, 2018, 10.1002/pssb.201700329
  45. (45) T. Ito, T. Akiyama, K. Nakamura, "Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)", Physica Status Solidi (B) Basic Research, 255, 1700241, 2018, 10.1002/pssb.201700241
  46. (46) T. Akiyama, S. Hori, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation", Japanese Journal of Applied Physics, 57, 04FR08, 2018, 10.7567/JJAP.57.04FR08
  47. (47) Yusuke Hayashi, Ryuji Katayama, T. Akiyama, T. Ito, Hideto Miyake, "Polarity inversion of aluminum nitride by direct wafer bonding", Applied Physics Express, 11, 031003, 2018, 10.7567/APEX.11.031003
  48. (48) T. Akiyama, K. Nakamura, T. Ito, "Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study", Applied Physics Express, 11, 025501, 2018, 10.7567/APEX.11.025501
  49. (49) Kenji Nawa, T. Akiyama, T. Ito, K. Nakamura, Tamio Oguchi, M. Weinert, "Scaled effective on-site Coulomb interaction in the DFT+ U method for correlated materials", Physical Review B, 97, 035117, 2018, 10.1103/PhysRevB.97.035117
  50. (50) A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)", Physical Review B, 97, 024401, 2018, 10.1103/PhysRevB.97.024401
  51. (51) T. Ito, T. Akiyama, K. Nakamura, A. -M. Pradipto, "An interpretation for defect-induced structural transformation in SiC", ECS Transactions, 86, 427, 2018, 10.1149/08607.0427ecst
  52. (52) T. Ito, T. Akiyama, K. Nakamura, "Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth", Journal of Crystal Growth, 477, 12, 2017, 10.1016/j.jcrysgro.2017.03.010
  53. (53) T. Ito, T. Akiyama, K. Nakamura, "Systematic Theoretical Investigations of Polytypism in AlN", Physica Status Solidi (C) Current Topics in Solid State Physics, 14, 1700212, 2018, 10.1002/pssc.201700212
  54. (54) T. Konishi, S. Tsukamoto, T. Ito, T. Akiyama, R. Kaida, "Atomistic behaviour of (n×3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition", Journal of Crystal Growth, 477, 104, 2017, 10.1016/j.jcrysgro.2017.01.009
  55. (55) T. Akiyama, T. Komoda, K. Nakamura, T. Ito, "Effects of polytypism on the thermoelectric properties of Group-IV semiconductor nanowires: A combination of density functional theory and boltzmann transport calculations", Physical Review Applied, 8, 24014, 2017, 10.1103/PhysRevApplied.8.024014
  56. (56) T. Akiyama, Ryohei Sakaguchi, K. Nakamura, T. Ito, "Effects of atomic arrangements on electronic structures of threading dislocations in III-nitride alloy semiconductors: A first-principles study", Physica Status Solidi (B) Basic Research, 254, 1600694, 2017, 10.1002/pssb.201600694
  57. (57) A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Mechanism and electric field induced modification of magnetic exchange stiffness in transition metal thin films on MgO(001)", Physical Review B, 96, 014425, 2017, 10.1103/PhysRevB.96.014425
  58. (58) T. Akiyama, G. Yoshimura, K. Nakamura, T. Ito, "Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers", Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 35, 04F103, 2017, 10.1116/1.4980048
  59. (59) Ryo Kaida, T. Akiyama, K. Nakamura, T. Ito, "Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface", Journal of Crystal Growth, 468, 919, 2017, 10.1016/j.jcrysgro.2016.10.064
  60. (60) Harunobu Nakane, T. Akiyama, K. Nakamura, T. Ito, "Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study", Journal of Crystal Growth, 468, 93, 2017, 10.1016/j.jcrysgro.2016.09.019
  61. (61) Kento Yamamoto, A. -M. Pradipto, Kenji Nawa, T. Akiyama, T. Ito, Teruo Ono, K. Nakamura, "Interfacial Dzyaloshinskii-Moriya interaction and orbital magnetic moments of metallic multilayer films", AIP ADVANCES, 7, 56302, 2017, 10.1063/1.4973217
  62. (62) K. Nakamura, T. Nomura, A. M. Pradipto, K. Nawa, T. Akiyama, T. Ito, "Effect of heavy-metal insertions at Fe/MgO interfaces on electric-field-induced modification of magnetocrystalline anisotropy", Journal of Magnetism and Magnetic Materials, 429, 214, 2017, 10.1016/j.jmmm.2017.01.034
  63. (63) T. Ito, T. Akiyama, "Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth", Crystals, 7, 46, 2017, 10.3390/cryst7020046

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