卓越型リサーチセンター
半導体の結晶科学とデバイス創製センター
Research Center for Materials Science and Advanced Electronics Created by Singularity活動実績
研究成果
研究業績リスト(代表3名について) 過去5年分(2017-2021)
- (1) T. Omori, A. Yabutani, S. Tanaka, K. Yamada, M. Shimokawa, R. Hasegawa, S. Iwayama, H. Miyake, T. Takeuchi1, S. Kamiyama1, and M. Iwaya1, "Reduction of dislocation density in lattice-relaxed
Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes", Applied Physics Express, 15, 3, 031004, (2022.3.3), 10.35848/1882-0786/ac5724 - (2) M. Shimokawa1, Y. Yamada, T. Omori, K. Yamada, R. Hasegawa, T. Nishibayashi, A. Yabutani, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, H. Miyake, K. Miyoshi, K. Naniwae, and A. Yamaguchi, "Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (~43 kA cm-2) using a laser liftoff method", Applied Physics Express, 15, 4, 041006, (2022.3.28), 10.35848/1882-0786/ac5e64
- (3) R. Moriya, J. Kikawa, S. Mouri, T. Shinohe, S. Xiao, H. Miyake, and T. Araki "Cathodoluminescence study of m-plane α-Ga2O3 grown by mist chemical vapor deposition", Phys, Status Solidi B, 259, 4, 2100598 (2022.1.18), 10.1002/pssb.202100598
- (4) Shin Yoshida, Kanako Shojiki, H. Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama "Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows", Japanese Journal of Applied Physics, 61, 030904 (2022.3.8).10.35848/1347-4065/ac55e5
- (5) M. Iwaya, S. Tanaka, T. Omori, K. Yamada, R. Hasegawa, M. Shimokawa, A. Yabutani, S. Iwayama, K. Sato, T. Takeuchi, S. Kamiyama, H. Miyake "Recent development of UV-B laser diodes", Japanese Journal of Applied Physics, 61, 4, 040501, (2022.3.16), 10.35848/1347-4065/ac3be8
- (6) H. Murotani, A. Fujii, R. Oshimura, T. Kusaba, K. Uesugi, H. Miyake, and Y. Yamaguchi, "Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates", Applied Physics Express, 14, 12, 122004 (2021.11.22). 10.35848/1882-0786/ac3802
- (7) K. Uesugi, H. Miyake, "Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs", Japanese Journal of Applied Physics, 60, 12, 120502 (2021.12.2). 10.35848/1347-4065/ac3026
- (8) Y. Hayashi, K. Uesugi, K. Shojiki, T. Tohei, A. Sakai, and H. Miyake, "Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing", AIP Advances, 11, 9, 095012 (2021.9.13). 10.1063/5.0059723
- (9) Y. Iba, K. Shojiki, S. Kuboya, K. Uesugi, S. Xiao, H. Miyake, "Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns" Journal of Crystal Growth, 570, 126237, (2021.9.15), 10.1016/j.jcrysgro.2021.126237
- (10) K. Shojiki, K. Uesugi, S. Kuboya, H. Miyake, "Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire", Journal of Crystal Growth, 574, 126309, (2021.9.15), 10.1016/j.jcrysgro.2021.126309
- (11) S. Tanaka, Y. Ogino, K. Yamada, R. Ogura, S. Teramura, M. Shimokawa, S. Ishizuka, S. Iwayama, K. Sato, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, "Low-threshold-current (~ 85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure", Applied Physics Express, 14, 9, 094009, (2021.9.3), 10.35848/1882-0786/ac200b
- (12) K. Uesugi, K. Shojiki, S. Xiao, S. Kuboya, H. Miyake, "Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films", MDPI Coatings, 11, 8, 956, (2021.8.10), 10.3390/coatings11080956
- (13) Y. Sakurai, K. Ueno, A. Kobayashi, K. Uesugi, H. Miyake, H. Fujioka, "High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing", physica status solidi (a), 218, 16, 2100074, (2021.8.17), 10.1002/pssa.202100074
- (14) S. Xiao, K. Shojiki, H. Miyake, "Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy", Journal of Crystal Growth, 566, 126163, (2021.7.15), 10.1016/j.jcrysgro.2021.126163
- (15) K. Sato, T. Omori, K. Yamada, S. Tanaka, S. Ishizuka, S. Teramura, S. Iwayama, M. Iwaya, H. Miyake, T. Takeuchi, S. Kamiyama, I. Akasaki, "Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length", Japanese Journal of Applied Physics, 60, 7, 074002, (2021.6.14), 10.35848/1347-4065/ac0643
- (16) S. Tanaka, S. Teramura, M. Shimokawa, K. Yamada, T. Omori, S. Iwayama, K. Sato, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate", Applied Physics Express, 14, 5, 055505, (2021.4.27), 10.35848/1882-0786/abf763
- (17) S, Tanaka, Y, Ogino, K, Yamada, T, Omori, R, Ogura, S, Teramura, M, Shimokawa,
S, Ishizuka, A, Yabutani, S, Iwayama, K, Sato, H, Miyake, M, Iwaya, T, Takeuchi, S, Kamiyama, I, Akasaki, "AlGaN-based UV-B laser diode with a high optical confinement factor", Applied Physics Letters, 118, 16, 163504, (2021.4.21), 10.1063/5.0046224 - (18) D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Applied Physics Express, 14, 3, 035505-1-035505-5, (2021.2), 10.35848/1882-0786/abe522
- (19) D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake, "High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes", Applied Physics Express, 14, 3, 035505-1-035505-5, (2021.2), 10.35848/1882-0786/abe522
- (20) I Abid, R Kabouche, F Medjdoub, S Besendorfer, E Meissner, J Derluyn, S Degroote, M Germain, H Miyake, "Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure", 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 310-312, (2020.9), 10.1109/ISPSD46842.2020.9170170
- (21) S. Kuboya, K. Uesugi, K. Shojiki, Y. Tezen, K. Norimatsu, H. Miyake, "Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer", Journal of Crystal Growth, 545, 125722, (2020.9), 10.1016/j.jcrysgro.2020.125722
- (22) A. Uedono, K. Shojiki, K. Uesugi, S. F Chichibu, S. Ishibashi, M. Dickmann, W. Egger, C. Hugenschmidt, H. Miyake, "Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams", Journal of Applied Physics, 128, 8, 085704, (2020.8), 10.1063/5.0015225
- (23) D. Wang, K. Uesugi, S. Xiao, K. Norimatsu, H. Miyake, "Low dislocation density AlN on sapphire prepared by double sputtering and annealing", Applied Physics Express, 13, 9, 095501, (2020.8), 10.35848/1882-0786/ababec
- (24) S. Teramura, Y. Kawase, Y. Sakuragi, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing", physica status solidi (a), 217, 14, 1900868, (2020.7), 10.1002/pssa.201900868
- (25) S. Miasojedovas, P. Ščajev, K. Jarašiūnas, B. Gil, H. Miyake, "Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K", Physical Review B, 102,3, 035201, (2020.7), 10.1103/PhysRevB.102.035201
- (26) T. Omori, S. Ishizuka, S. Tanaka, S. Yasue, K. Sato, Y. Ogino, S. Teramura, K. Yamada, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "Internal loss of AlGaN-based ultraviolet-B band lasr diodes with p-type AlGaN cladding layer using polarization doping", Applied Physics Express, 13,7, 071008, (2020.6), 10.35848/1882-0786/ab9e4a
- (27) D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani, "Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation", Applied Physics Express, 13, 6, 061003, (2020.5), 10.35848/1882-0786/ab8c1c
- (28) Bowen Sheng, Gordon Schmidt, Frank Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, Jurgen Blasing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, Andre Strittmatter, Bo Shen, Jurgen Christen, Xinqiang Wang, "Individually resolved luminescence from closely stacked GaN/AlN quantum wells", Photonics Research, 8,4, 610-615, (2020.4), 10.1364/PRJ.384508
- (29) S. Tanaka, Y. Kawase, S. Teramura, S. Iwayama, K. Sato, S. Yasue, T. Omori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers", Applied Physics Express, 13, 4, 045504, (2020.3), 10.35848/1882-0786/ab7caf
- (30) K. Sato, S. Yasue, K. Yamada, S. Tanaka, T. Omori, S. Ishizuka, S. Teramura, Y. Ogino, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, "Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire", Applied Physics Express, 13, 3, 031004, (2020.2), 10.35848/1882-0786/ab7711
- (31) Y. Iba, K. Shojiki, K. Uesugi, S. Xiao, H. Miyake, "MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN", Journal of Crystal Growth, 532, 125397, (2020.2), 10.1016/j.jcrysgro.2019.125397
- (32) K. Uesugi, K. Shojiki, Y. Tezen, Y. Hayashi, H. Miyake, "Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template", Applied Physics Letters, 116, 6, 062101, (2020.2), 10.1063/1.5141825
- (33) S. Teramura, Y. Kawase, Y. Sakuragi, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing", physica status solidi (a), 1900868, (2020.2), 10.1002/pssa.201900868
- (34) T. Shirato, Y. Hayashi, K. Uesugi, K. Shojiki, H. Miyake, "High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate", physica status solidi (b), 257, 2, 1900447, (2020.2), 10.1002/pssb.201900447
- (35) H. Fujikura, T. Konno, T. Kimura, H. Miyake, "AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates", Applied Physics Express, 13, 2, 025506, (2020.1), 10.7567/1882-0786/ab65a0
- (36) K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake, "Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells", AIP Advances, 9, 12, 125342, (2019), 10.1063/1.5125799
- (37) SH. Lee, H. Jeong, OF. NgomeOkello, S. Xiao, S. Moon, D. Kim, GY. Kim, JL. Lo, YC. Peng, BM. Cheng, H. Miyake, SY. Choi, JK. Kim, "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing", Scientific reports, 9, 1, 1-8, (2019), 10.1038/s41598-019-47093-9
- (38) Y. Ishitani, K. Oki, H. Miyake, "Statistics of excitonic energy states based on phononic-excitonic-radiative model", Japanese Journal of Applied Physics, 58, SC, SCCB34, (2019), 10.7567/1347-4065/ab09e2
- (39) Y. Kawase, S. Ikeda, Y. Sakuragi, S. Yasue, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake, "Ultraviolet-B band lasers fabricated on highly relaxed thick Al0. 55Ga0. 45N films grown on various types of AlN wafers", Japanese Journal of Applied Physics, 58, SC, SC1052, (2019), 10.7567/1347-4065/ab0d04
- (40) T. Akiyama, M. Uchino, K. Nakamura, T. Ito, S. Xiao, H. Miyake, "Structural analysis o K. Uesugi, Y. Hayashi, K. Shojiki, H. Miyake, "Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures", Applied Physics Express, 12, 6, 065501, (2019), 10.7567/1882-0786/ab1ab8 K. Nagamatsu, X. Liu, K. Uesugi, H. Miyake, "Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN", Japanese Journal of Applied Physics, 58, SC, SCCC07, (2019), 10.7567/1347-4065/ab07a1f polarity inversion boundary in sputtered AlN films annealed under high temperatures", Japanese Journal of Applied Physics, 58, SC, SCCB30, (2019), 10.7567/1347-4065/ab0d01
- (41) K. Shojiki, Y. Hayashi, K. Uesugi, H. Miyake, "Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy" Japanese Journal of Applied Physics, 58, SC, SCCB17, (2019), 10.7567/1347-4065/ab0d07
- (42) Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen, H. Wang, T. Wang, P. Wang, P. Jin, Y. Chen, V. Kozlovsky, D. Sviridov, M. Zverev, E. Zhdanova, N. Gamov, V. Studenov, H. Miyake, H. Li, S. Guo, X. Yang, F. Xu, T. Yu, Z. Qin, W. Ge, B. Shen, X. Wang, "Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt", Advanced Optical Materials, 7, 10, 1801763, (2019), 10.1002/adom.201801763
- (43) S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake, "Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy", Japanese Journal of Applied Physics, 58, SC, SC1003, (2019), 10.7567/1347-4065/ab0ad4
- (44) Y. Hayashi, K. Tanigawa, K. Uesugi, K. Shojiki, H. Miyake, "Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing", Journal of Crystal Growth, 512, 131-135, (2019), 10.1016/j.jcrysgro.2019.02.026
- (45) S. Tanaka, K. Shojiki, K. Uesugi, Y. Hayashi, H. Miyake, "Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film", Journal of Crystal Growth, 512, 16-19, (2019), 10.1016/j.jcrysgro.2019.02.001
- (46) K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake, "Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing", Journal of Crystal Growth, 510, 13-17, (2019), 10.1016/j.jcrysgro.2019.01.011
- (47) Y. Sakurai, K. Ueno, A. Kobayashi, J. Ohta, H. Miyake, H. Fujioka, "Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering", APL Materials, 6(11), 111103,
(2018), 10.1016/j.jcrysgro.2018.09.002 - (48) S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, Y. Yamada, "Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells", Japanese Journal of Applied Physics, 57(6), 60311, (2018), 10.7567/JJAP.57.060311
- (49) H. Murotani, Y. Hayakawa, K. Ikeda, H. Miyake, K. Hiramtsu, Y. Yamada, "Temperature dependence of excitonic transitions in Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells from 4 to 750 K", Journal of Applied Physics, 123(20), 205705, (2018), 10.1063/1.5023996
- (50) S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara, "Improvement mechanism of sputtered AlN films by high-temperature annealing", Journal of Crystal Growth, 502, 41-44, (2018), 10.1016/j.jcrysgro.2018.09.002
- (51) Y. Hayashi, R. Katayama, T. Akiyama, T. Ito, H. Miyake, "Polarity inversion of aluminum nitride by direct wafer bonding", Applied Physics Express, 11(3), 31003, (2018), 10.7567/APEX.11.031003
- (52) K. Shida, S. Takeuchi, T. Tohei, H. Miyake, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura, A. Sakai, "Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction", Journal of Applied Physics, 123(16), 161563, (2018), 10.1063/1.5011291
- (53) H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, Y. Yamada, "Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0. 61Ga0. 39N Epitaxial Layer", physica status solidi (b), 255(5), 1700374, (2018), 10.1002/pssb.201700374
- (54) J. Hakamata, Y. Kawase, L. Dong, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, H. Miyake, I. Akasaki, "Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing", physica status solidi (b), 255(5), 1700506, (2018), 10.1002/pssb.201700506
- (55) H. Miyake, Y. Hayashi, S. Xiao, K. Hiramatsu, "High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation)", Gallium Nitride Materials and Devices XIII, 10532, 1053202, (2018), 10.1117/12.2292561
- (56) A. Mishima, Y. Tomita, Y. Yano, T. Tabuchi, K. Matsumoto, H. Miyake, "Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere", Gallium Nitride Materials and Devices XIII, 10532, 1053204, (2018), 10.1117/12.2292182
- (57) N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl, "AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire", Applied Physics Letters, 112(4), 41110, (2018), 10.1063/1.5010265
- (58) DT. Khan, S. Takeuchi, Y. Nakamura, K. Nakamura, T. Arauchi, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai, "Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction'', Japanese Journal of Applied Physics, 56 (2), 025502 (2017), 10.7567/JJAP.56.025502
- (59) H. Murotani, K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, Y. Yamada, "High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells'', Applied Physics Express, 10 (2), 021002 (2017), 10.7567/APEX.10.021002
- (60) K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, Y. Yamada, "Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells'', Applied Physics Express, 10 (5), 051003 (2017), 10.7567/APEX.10.051003
- (61) CY. Huang, PY. Wu, KS. Chang, YH. Lin, WC. Peng, YY. Chang, JP Li, HW. Yen, YS. Wu, H. Miyake, HC. Kuo, "High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes'', AIP Advances, 7 (5), 055110 (2017), 10.1063/1.4983708
- (62) S. Okada, H. Iwai, H. Miyake, K. Hiramatsu, "Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates'', Journal of Crystal Growth, 468, 851-855 (2017), 10.1016/j.jcrysgro.2016.12.011
- (63) CH. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu, "Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions'', Journal of Crystal Growth, 468, 845-850 (2017), 10.1016/j.jcrysgro.2016.09.076
- (64) A. Motogaito, Y. Iguchi, S. Kato, H. Miyake, K. Hiramatsu, "Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus'', 2017 22nd Microoptics Conference (MOC), 276-277(2017), 10.23919/MOC.2017.8244593
- (65) S. Okada, H. Iwai, H. Miyake, K. Hiramatsu, "Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns'', Japanese Journal of Applied Physics, 56 (12), 125504 (2017), 10.7567/JJAP.56.125504
- (66) A. Motogaito, T. Nakajima, H. Miyake, K. Hiramatsu, "Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure'', Applied Physics A, 123 (12), 729, (2017), 10.1007/s00339-017-1367-6
- (67) R. Yoshizawa, H. Miyake, K. Hiramatsu, "Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy", Japanese Journal of Applied Physics, 57 (1S), 01AD05 (2017), 10.7567/JJAP.57.01AD05
秋山亨(代表的教員)
- (1) T. Akiyama, T. Shimizu, T. Ito, H. Kageshima, K. Chokawa, K. Shiraishi, "Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces", Japanese Journal of Applied Physics, 61, SH1002, 2022, 10.35848/1347-4065/ac5a96
- (2) F. Hishiki, T. Akiyama, T. Kawamura, T. Ito, "K. Niki, T. Akiyama, T. Ito, "Structures and stability of GaN/Ga2O3 interfaces: a first-principles study", Japanese Journal of Applied Physics, 61, 065501, 2022, 10.35848/1347-4065/ac5e90
- (3) K. Niki, T. Akiyama, T. Ito, "An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN", Japanese Journal of Applied Physics, 61, 55503, 2022, 10.35848/1347-4065/ac5dab
- (4) S. Ohata, T. Kawamura, T. Akiyama, S. Usami, M. Imanishi, M. Yoshimura, Y. Mori, T. Sumi, J. Takino, "Influence of oxygen-related defects on the electronic structure of GaN", Japanese Journal of Applied Physics, 61, 61004, 2022, 10.35848/1347-4065/ac6645
- (5) T. Kawamura, T. Akiyama, "Bandgap engineering of alpha-Ga2O3 by hydrostatic, uniaxial, and equibiaxial strain", Japanese Journal of Applied Physics, 61, 061004, 2022, 10.35848/1347-4065/ac468f
- (6) T. Shimizu, T. Akiyama, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction", Physical Review Materials, 5, 114601, 2021, 10.1103/PhysRevMaterials.5.114601
- (7) T. Akiyama, A. Nakatani, T. Shimizu, Takumi Ohka, T. Ito, "Effective approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces", Japanese Journal of Applied Physics, 60, 8701, 2021, 10.35848/1347-4065/ac1128
- (8) T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation", Japanese Journal of Applied Physics, 60, SBBD10, 2021, 10.35848/1347-4065/abdcb1
- (9) T. Akiyama, T. Kawamura, T. Ito, "Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds", Applied Physics Letters, 118, 23101, 2021, 10.1063/5.0032452
- (10) T. Kawamura, T. Akiyama, A. Kitamoto, M. Imanishi, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, K. Kakimoto, "Absolute surface energies of oxygen-adsorbed GaN surfaces", Journal of Crystal Growth, 549, 125868, 2021, 10.1016/j.jcrysgro.2020.125868
- (11) T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study", ECS Transactions, 98, 37, 2020, 10.1149/09803.0037ecst
- (12) K. Nagai, T. Akiyama, K. Nakamura, T. Ito, "A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate", ECS Transactions, 98, 155, 2020, 10.1149/09806.0155ecst
- (13) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of Film Thickness on Structural Stability for BAlN and BGaN Alloys: Bond-Order Interatomic Potential Calculations", Physica Status Solidi (B) Basic Research, 257, 2000205, 2020, 10.1002/pssb.202000205
- (14) T. Shimizu, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface", Japanese Journal of Applied Physics, 59, SMMD01, 2020, 10.35848/1347-4065/ab85dd
- (15) Takumi Ohka, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study", Crystal Growth & Design, 20, 4358, 2020, 10.1021/acs.cgd.0c00117
- (16) Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition", Applied Physics Express, 13, 065505, 2020, 10.35848/1882-0786/ab9182
- (17) T. Kawamura, Y. Fujita, Y. Hamaji, T. Akiyama, Y. Kangawa, I. Gorczyca, T. Suski, M. Wierzbowska, S. Krukowski, "First-Principles Calculation of Bandgaps of AlInN Alloys and Short-Period AlxIn1-xN/Al1-yInyN Superlattices", Physica Status Solidi (B) Basic Research, 257, 1900530, 2022, 10.1002/pssb.201900530
- (18) H. Nakashima, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Electron correlation effects and magneto-optical properties of yttrium iron garnet", AIP Advances, 10, 045029, 2022, 10.1063/1.5130147
- (19) T. Akiyama, Takumi Ohka, K. Nakamura, T. Ito, "Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces", Japanese Journal of Applied Physics, 59, SGGK03, 2022, 10.7567/1347-4065/ab6566
- (20) Y. Seta, A. -M. Pradipto, T. Akiyama, K. Nakamura, T. Ito, "Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor-Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies", Physica Status Solidi (B) Basic Research, 257, 2000205, 2020, 10.1002/pssb.201900523
- (21) T. Akiyama, Takumi Ohka, K. Nakamura, T. Ito, "Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface", Journal of Crystal Growth, 532, 25410, 2020, 10.1016/j.jcrysgro.2019.125410
- (22) T. Shimizu, Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, Akira Kusaba, Y. Kangawa, "Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions", Japanese Journal of Applied Physics, 59, 28003, 2020, 10.35848/1347-4065/ab68af
- (23) K. Yonemoto, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate", Journal of Crystal Growth, 532, 125369, 2020, 10.1016/j.jcrysgro.2019.125369
- (24) M. Arifin, T. Matsumoto, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "First principles calculation of optical properties of transition metals for surface plasmon resonance application", e-Journal of Surface Science and Nanotechnology, 18, 133, 2020, 10.1380/ejssnt.2020.133
- (25) T. Akiyama, Y. Hasegawa, K. Nakamura, T. Ito, "Realization of honeycomb structures in octet A N B8-N binary compounds under two-dimensional limit", Applied Physics Express, 12, 125501, 2019, 10.7567/1882-0786/ab524c
- (26) K. Yonemoto, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)", Japanese Journal of Applied Physics, 58, SIIB25, 2019, 10.7567/1347-4065/ab19ad
- (27) T. Akiyama, K. Nakamura, T. Ito, "Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study", Nanotechnology, 30, 234002, 2019, 10.1088/1361-6528/ab06d0
- (28) S. Tsumuki, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate", Japanese Journal of Applied Physics, 58, SC1009, 2019, 10.7567/1347-4065/ab06b1
- (29) T. Akiyama, M. Uchino, K. Nakamura, T. Ito, S. Xiao, H. Miyake, "Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures", Japanese Journal of Applied Physics, 58, SCCB30, 2019, 10.7567/1347-4065/ab0d01
- (30) T. Akiyama, Y. Tsuboi, K. Nakamura, T. Ito, "An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1 1 1) substrate", Journal of Crystal Growth, 511, 89, 2019, 10.1016/j.jcrysgro.2019.01.036
- (31) S. Ando, A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Effect of 4d and 5d Transition-Metal Insertions to Spin-Dependent Transports in Fe/MgO Superlattices", Journal of Electronic Materials, 48, 1380, 2019, 10.1007/s11664-018-6779-3
- (32) K. Hayashi, A. -M. Pradipto, K. Nozaki, T. Akiyama, T. Ito, Tamio Oguchi, K. Nakamura, "Machine Learning Approach for Data Analysis of Magnetic Orbital Moments and Magnetocrystalline Anisotropy in Transition-Metal Thin Films on MgO(001)", Journal of Electronic Materials, 48, 1319, 2019, 10.1007/s11664-018-6808-2
- (33) Y. Seta, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth", Journal of Crystal Growth, 510, 7, 2019, 10.1016/j.jcrysgro.2018.12.011
- (34) T. Akiyama, Y. Seta, K. Nakamura, T. Ito, "Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides", Physical Review Materials, 3, 023401, 2019, 10.1103/PhysRevMaterials.3.023401
- (35) T. Ito, T. Akiyama, K. Nakamura, A. -M. Pradipto, "Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)", Physica Status Solidi (A) Applications and Materials Science, 216, 201800476, 2019, 10.1002/pssa.201800476
- (36) T. Ito, T. Akiyama, K. Nakamura, "Growth mode in heteroepitaxial system from nano- and macro- theoretical viewpoints", Journal of Crystal Growth, 512, 41, 2019, 10.1016/j.jcrysgro.2019.01.028
- (37) Y. Seta, A. -M. Pradipto, T. Akiyama, K. Nakamura, T. Ito, Akira Kusaba, Y. Kangawa, "Thermodynamic analysis of semipolar gan and aln under metalorganic vapor phase epitaxy growth conditions", Japanese Journal of Applied Physics, 58, SC1014, 2019, 10.7567/1347-4065/ab040a
- (38) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Theoretical investigations on the structural stability and miscibility in baln and bgan alloys: Bond-order interatomic potential calculations", Japanese Journal of Applied Physics, 58, SCCB21, 2019, 10.7567/1347-4065/ab06af
- (39) T. Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Y. Kangawa, Koichi Kakimoto, T. Akiyama, "First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth", Japanese Journal of Applied Physics, 57, 115504, 2019, 10.7567/JJAP.57.115504
- (40) Y. Hasegawa, T. Akiyama, A. -M. Pradipto, K. Nakamura, T. Ito, "Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys", Journal of Crystal Growth, 504, 13, 2018, 10.1016/j.jcrysgro.2018.09.016
- (41) M. Uchino, T. Akiyama, K. Nakamura, T. Ito, "An ab initio approach to polarity inversion of AlN and GaN films on AIN(000(1)over-bar) substrate with Al overlayers: an insight from interface energies", Japanese Journal of Applied Physics, 57, 115504, 2018, 10.7567/JJAP.57.098001
- (42) K. Nakamura, A. M. Pradipto, T. Akiyama, T. Ito, T. Oguchi, M. Weinert, "Symmetric and asymmetric exchange stiffnesses of transition-metal thin film interfaces in external electric field", Journal of Magnetism and Magnetic Materials, 457, 97, 2018, 10.1016/j.jmmm.2018.02.068
- (43) Y. Tsuboi, T. Akiyama, K. Nakamura, T. Ito, "Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study", Physica Status Solidi (B) Basic Research, 255, 1700446, 2018, 10.1002/pssb.201700446
- (44) T. Akiyama, Harunobu Nakane, Motoshi Uchino, K. Nakamura, T. Ito, "Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies", Physica Status Solidi (B) Basic Research, 255, 1700329, 2018, 10.1002/pssb.201700329
- (45) T. Ito, T. Akiyama, K. Nakamura, "Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)", Physica Status Solidi (B) Basic Research, 255, 1700241, 2018, 10.1002/pssb.201700241
- (46) T. Akiyama, S. Hori, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, "Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation", Japanese Journal of Applied Physics, 57, 04FR08, 2018, 10.7567/JJAP.57.04FR08
- (47) Yusuke Hayashi, Ryuji Katayama, T. Akiyama, T. Ito, Hideto Miyake, "Polarity inversion of aluminum nitride by direct wafer bonding", Applied Physics Express, 11, 031003, 2018, 10.7567/APEX.11.031003
- (48) T. Akiyama, K. Nakamura, T. Ito, "Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study", Applied Physics Express, 11, 025501, 2018, 10.7567/APEX.11.025501
- (49) Kenji Nawa, T. Akiyama, T. Ito, K. Nakamura, Tamio Oguchi, M. Weinert, "Scaled effective on-site Coulomb interaction in the DFT+ U method for correlated materials", Physical Review B, 97, 035117, 2018, 10.1103/PhysRevB.97.035117
- (50) A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)", Physical Review B, 97, 024401, 2018, 10.1103/PhysRevB.97.024401
- (51) T. Ito, T. Akiyama, K. Nakamura, A. -M. Pradipto, "An interpretation for defect-induced structural transformation in SiC", ECS Transactions, 86, 427, 2018, 10.1149/08607.0427ecst
- (52) T. Ito, T. Akiyama, K. Nakamura, "Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth", Journal of Crystal Growth, 477, 12, 2017, 10.1016/j.jcrysgro.2017.03.010
- (53) T. Ito, T. Akiyama, K. Nakamura, "Systematic Theoretical Investigations of Polytypism in AlN", Physica Status Solidi (C) Current Topics in Solid State Physics, 14, 1700212, 2018, 10.1002/pssc.201700212
- (54) T. Konishi, S. Tsukamoto, T. Ito, T. Akiyama, R. Kaida, "Atomistic behaviour of (n×3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition", Journal of Crystal Growth, 477, 104, 2017, 10.1016/j.jcrysgro.2017.01.009
- (55) T. Akiyama, T. Komoda, K. Nakamura, T. Ito, "Effects of polytypism on the thermoelectric properties of Group-IV semiconductor nanowires: A combination of density functional theory and boltzmann transport calculations", Physical Review Applied, 8, 24014, 2017, 10.1103/PhysRevApplied.8.024014
- (56) T. Akiyama, Ryohei Sakaguchi, K. Nakamura, T. Ito, "Effects of atomic arrangements on electronic structures of threading dislocations in III-nitride alloy semiconductors: A first-principles study", Physica Status Solidi (B) Basic Research, 254, 1600694, 2017, 10.1002/pssb.201600694
- (57) A. -M. Pradipto, T. Akiyama, T. Ito, K. Nakamura, "Mechanism and electric field induced modification of magnetic exchange stiffness in transition metal thin films on MgO(001)", Physical Review B, 96, 014425, 2017, 10.1103/PhysRevB.96.014425
- (58) T. Akiyama, G. Yoshimura, K. Nakamura, T. Ito, "Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers", Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 35, 04F103, 2017, 10.1116/1.4980048
- (59) Ryo Kaida, T. Akiyama, K. Nakamura, T. Ito, "Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface", Journal of Crystal Growth, 468, 919, 2017, 10.1016/j.jcrysgro.2016.10.064
- (60) Harunobu Nakane, T. Akiyama, K. Nakamura, T. Ito, "Structures and stability of polar GaN thin films on ScAlMgO
4 substrate: An ab initio-based study", Journal of Crystal Growth, 468, 93, 2017, 10.1016/j.jcrysgro.2016.09.019 - (61) Kento Yamamoto, A. -M. Pradipto, Kenji Nawa, T. Akiyama, T. Ito, Teruo Ono, K. Nakamura, "Interfacial Dzyaloshinskii-Moriya interaction and orbital magnetic moments of metallic multilayer films", AIP ADVANCES, 7, 56302, 2017, 10.1063/1.4973217
- (62) K. Nakamura, T. Nomura, A. M. Pradipto, K. Nawa, T. Akiyama, T. Ito, "Effect of heavy-metal insertions at Fe/MgO interfaces on electric-field-induced modification of magnetocrystalline anisotropy", Journal of Magnetism and Magnetic Materials, 429, 214, 2017, 10.1016/j.jmmm.2017.01.034
- (63) T. Ito, T. Akiyama, "Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth", Crystals, 7, 46, 2017, 10.3390/cryst7020046